型号:

IRLR8256TRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 25V 81A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRLR8256TRPBF PDF
标准包装 2,000
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 25V
电流 - 连续漏极(Id) @ 25° C 81A
开态Rds(最大)@ Id, Vgs @ 25° C 5.7 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 2.35V @ 25µA
闸电荷(Qg) @ Vgs 15nC @ 4.5V
输入电容 (Ciss) @ Vds 1470pF @ 13V
功率 - 最大 63W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 带卷 (TR)
产品目录页面 1522 (CN2011-ZH PDF)
其它名称 IRLR8256TRPBFTR
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